| PART |
Description |
Maker |
| SPA11N80C3 SPA11N80C308 |
CoolMOSTM Power Transistor Features New revolutionary high voltage technology
|
Infineon Technologies AG
|
| SPB11N60S5 SPB11N60S505 |
New revolutionary high voltage technology Ultra low gate charge
|
http://
|
| SPI07N60S5 SPP07N60S509 |
Cool MOS Power Transistor Feature New revolutionary high voltage technology
|
Infineon Technologies AG
|
| SPP11N65C3 SPA11N65C3 SPI11N65C3 SPP11N65C309 |
Cool MOS Power Transistor Feature New revolutionary high voltage technology
|
Infineon Technologies AG
|
| SPP20N60CFD09 |
Cool MOS Power Transistor Feature New revolutionary high voltage technology
Cool MOS?/a> Power Transistor Feature New revolutionary high voltage technology
|
Infineon Technologies AG
|
| IPW60R250CP |
Cool MOS?/a> Power Transistor Feature New revolutionary high voltage technology
|
Infineon Technologies AG
|
| SPB02N60S5 SPB02N60S507 |
Cool MOS?/a> Power Transistor Feature New revolutionary high voltage technology
|
Infineon Technologies AG
|
| SPN01N60C3 SPN01N60C305 |
New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated
|
Infineon Technologies AG
|
| SPP11N65C3 SPA11N65C3 SPI11N65C3 SPP11N65C307 |
New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated
|
Infineon Technologies AG
|
| SPI08N50C3 SPP08N50C3 SPA08N50C3 SPP08N50C309 |
New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated
|
Infineon Technologies AG
|
| SPP21N50C3 SPP21N50C307 SPI21N50C3 SPA21N50C3 |
New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge
|
Infineon Technologies AG
|
| IPB60R060C7 |
CoolMOS?C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies.
|
Infineon Technologies A...
|
